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Updated: Jul 16, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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单层MoS2晶体管与铁电BiAlO310001) 极地表面集成的极化调节界面特性

Jin Yuan1, Jian-Qing Dai1, Yu-Zhu Liu1

  • 1Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China. djqkust@sina.com.

Physical chemistry chemical physics : PCCP
|September 15, 2023
PubMed
概括

本研究探讨了使用单层MoS2和BiAlO3.3的新型铁电场效应晶体管 (FeFET). 结果显示可调节的电子和接触特性,用于先进的非挥发性内存应用.

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Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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