大规模的互补逻辑电路由Al2O3激活诱导载体极性调制在化中启用
Tanmoy Das1,2, Sukhyeong Youn1,2, Jae Eun Seo1,2
1Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea.
ACS applied materials & interfaces
|September 15, 2023
概括
研究人员使用氧化 (Al2O3) 实现了n型晶体管在二维 (2D) 脱化物 (WSe2) 中的n型晶体管行为,用于补充性金属氧化物半导体 (CMOS) 电路. 这种电子电荷转移方法可用于高级二维逻辑设备的极性控制.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 将两个维 (2D) 材料 (如过渡金属二甲基化物 (TMDC)) 集成到互补的金属氧化物半导体 (CMOS) 逻辑电路中,在控制晶体管极性 (n型和p型) 方面面临挑战.
- 在TMDC中实现可靠的n型行为对于开发先进的电子设备和集成电路至关重要.
研究的目的:
- 开发一种有效的,非破坏性的方法来控制2D材料的载体极性.
- 为了证明使用这种方法制造基于2D材料的功能逻辑电路的可行性.
主要方法:
- 将一层薄薄的氧化 (Al2O3) 沉积在 tungsten diselenide (WSe2) 上,以诱导电子电荷转移.
- 在原始WSe2 (p型) 和Al2O3-被动化WSe2 (n型) 上制造和表征晶体管.
- 构建和测试CMOS逆变器和各种逻辑门 (AND,OR,NAND,NOR) 和静态随机访问存储器 (SRAM) 电路.
主要成果:
- 在WSe2中,通过沉积Al2O3.3,从p型到n型实现了完整的载体极性转换.
- n型WSe2晶体管的最大ON电流为~0.1μA,电子流动性为7cm2V-1s-1.
- 使用2D-TMDC的同质CMOS逆变器在VDD=5V时显示电压增益为7.
- 我们成功地制造了AND,OR,NAND,NOR逻辑门和SRAM电路.
结论:
- Al2O3被动化层有效地控制了WSe2中的载波极性,从而实现了n型晶体管的行为.
- 这种电子电荷转移方法是基于2D-TMDCs的高密度电路组件的前性方法.
- 展示的逻辑电路凸显了下一代电子产品中二维材料的潜力.
相关概念视频
MOSFET: Enhancement Mode
378
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
378
MOS Capacitor
830
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
830
Biasing of Metal-Semiconductor Junctions
279
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
279
Schottky Barrier Diode
397
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
397
Metal-Semiconductor Junctions
380
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
380
MOSFET: Depletion Mode
389
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
389


