氧气在无形碳硬面具等离子蚀刻中的作用
Hee-Jung Yeom1,2, Min Young Yoon1, Daehan Choi1
1Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
ACS omega
|September 18, 2023
概括
在等离子蚀刻中控制氧气水平是无形碳层 (ACL) 硬面具的关键. 氧度的微小变化会显著影响蚀刻速率和形状,这对于半导体制造至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 等离子体物理学的物理学
- 半导体制造业 半导体制造业
背景情况:
- 在先进的半导体工艺中,无形碳层 (ACL) 硬面膜对于高比例 (HAR) 蚀刻至关重要.
- 在等离子体条件下对ACL硬面膜蚀刻特征的研究有限.
- 了解硬面罩蚀刻对于设备的质量和性能至关重要.
研究的目的:
- 在复杂的等离子体环境中调查氧气在ACL硬面具蚀刻中的作用.
- 为了阐明受氧度影响的蚀刻机制.
主要方法:
- 利用了等离子体诊断和晶圆处理实验.
- 复杂气体混合体等离子蚀刻过程中的不同氧气度 (3.5-6.5%).
主要成果:
- 证明微小的氧气度变化 (3.5-6.5%) 显著影响ACL蚀刻速率和形状.
- 提供了一个详细的机制,解释氧气在ACL蚀刻中的作用.
- 为ACL硬面罩实现了出色的亚微米蚀刻档案.
结论:
- 优化氧气度对于控制ACL硬面罩蚀刻特征至关重要.
- 这项研究提供了一种在HAR蚀刻中实现优质蚀刻配置的方法.
- 强调精确的等离子体状况控制对于半导体制造的重要性.
相关概念视频
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