外部电场对β-Ga2O3的电子结构和光学特性的影响:DFT研究
Hao Wu1, Cuihua Zhao1,2, WenBo Zhao1
1School of Resources, Environment and Materials, Guangxi University Nanning 530004 China chzhao@gxu.edu.cn.
RSC advances
|September 18, 2023
概括
将电场应用于β-氧化物 (β-Ga2O3) 调整其电子结构和光学特性. 优化的电场通过减少带间隙和增加光学吸收来增强光电特性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体物理 半导体物理
背景情况:
- β-氧化物 (β-Ga2O3) 是一个有前途的宽带间隙半导体,在电子和光电子领域具有潜在的应用.
- 了解外部刺激,如电场对其属性的影响,对于设备优化至关重要.
研究的目的:
- 研究不同电场对β-Ga2O3的电子结构和光学特性的影响.
- 确定最佳电场强度,以增强β-Ga2O3的光电特性.
主要方法:
- 使用GGA+U方法进行密度函数理论 (DFT) 计算.
- 在不同电场强度下分析电子带结构,介电函数和光学吸收光谱.
主要成果:
- 随着电场强度的增加,β-Ga2O3的带间隙会减少,从4.865 eV (内在) 降至2.757 eV,在0.20 eV Å-1时.
- 电场诱导介电函数的新峰值,并增加电导率.
- 光学吸收在400-600nm范围内得到增强,达到0.15 eV Å-1的峰值,进一步增加导致吸收减少.
结论:
- 适当的电场可以有效调节带间隙,并改善β-Ga2O3的光电特性.
- 在电场方向上,O-Ga 键的长度显著增加.
- 电场应用提供了一种可行的方法来调整光学吸收并提高基于β-Ga2O3的设备的性能.
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