解决了在基于氧化的电阻访问内存中在设备小型化过程中增加形成电压的问题,使用高K侧墙材料
Fei Yang1, Zijian He1, Bingkun Liu1
1School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.
Nanotechnology
|September 18, 2023
概括
研究人员为电阻随机存储器 (RRAM) 设备开发了一种电热模型. 添加氧化 (La2O3) 侧墙材料可降低成型电压,并提高设备性能,特别是在小型化过程中.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 电阻随机访问存储器 (RRAM) 是一个有前途的非易失性存储器技术.
- 了解电热合对于优化RRAM设备至关重要.
- 氧气空位迁移是RRAM运行的关键机制.
研究的目的:
- 为RRAM设备开发一个精确的电热合模型.
- 为了研究一种新型高压电常数 (high-k) 侧墙材料,氧化物 (La2O3) 对RRAM性能的影响.
- 分析侧墙导热率对装置形成电压的影响.
主要方法:
- 建立了一个基于氧气空位导电机制的电热合模型.
- 通过解决部分微分方程来模拟设备阻力变化.
- 在RRAM设备模型中引入La2O3作为侧墙材料.
- 研究了侧墙导热率对形成电压的影响.
主要成果:
- 拟议的模型准确地模拟了RRAM形成,重置和设置过程.
- 拉2O3侧墙集中电场,加速导电丝的形成.
- La2O3侧墙有效地减轻了设备小型化过程中形成电压的增加.
- 低侧墙导热率降低了形成电压,提高了温度度.
结论:
- 这种La2O3侧墙材料显示了提高RRAM性能和实现微型化的巨大潜力.
- 侧墙材料特性,特别是导热性,在优化RRAM形成电压方面发挥着至关重要的作用.
- 这些发现为未来RRAM设计中选择最佳侧墙材料提供了基础.
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