磁场驱动的导体配置转换在辐射阴性液晶滴中
Sophie Ettinger1, Charlotte G Slaughter1, Sebastian Hurtado Parra1
1Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA.
Physical review. E
|September 19, 2023
概括
我们观察到磁场驱动的转变在阴性液晶滴中,改变它们的导体配置从辐射到轴向,有缺陷. 这为液晶中这种现象提供了第一个实验视图.
科学领域:
- 材料科学 材料科学 材料科学
- 物理 物理学 物理
- 软物质物理学 软物质物理学
背景情况:
- 磁场中的纳米液晶 (NLC) 滴滴行为是理解软物质物理学的关键.
- 之前的研究集中在NLC滴中的磁场诱导过渡的理论方面.
- 在磁场下的NLC滴中对导体配置和缺陷演变的实验观测仍然有限.
研究的目的:
- 通过实验观察和阐明导体配置和缺陷演变在应用磁场下的阴性液晶水滴中.
- 为了研究磁场驱动的过渡从变形的辐射到轴向有缺陷的配置.
- 了解这种过渡与传统平面的弗雷德里克斯过渡之间的根本差异.
主要方法:
- 使用偏振光学显微镜进行连续观察滴滴导体场.
- 采用可变电磁器 (高达1特斯拉) 来应用受控磁场.
- 执行Landau-de Gennes数值模拟以模拟导演配置和过渡动态.
主要成果:
- 观察到磁场诱导的过渡从一个点缺陷到一个环缺陷在一个关键的磁场.
- 这种过渡的临界场与滴滴半径有反向关系.
- 过渡相对独立于表面活性剂的类型和度,允许估计固强度.
结论:
- 这项研究提供了第一个对磁场诱导的导体配置过渡在阴性液晶滴中的实验观测.
- 这些发现阐明了缺陷演变的机制和过渡的第一阶段性质.
- 估计了常见表面活性剂在NLC-水界面上的定强度,有助于理解界面现象.
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