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Updated: Jul 16, 2025

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基于晶片的,,化薄体 (5纳米) 双门MOSFET用于混合射频应用的参数分析

Pattunnarajam Paramasivam¹, Naveenbalaji Gowthaman², Viranjay M Srivastava²

¹Department of Electronics and Communication Engineering, Prince Shri Venkateshwara Padmavathy Engineering College, Chennai, 600127, India.

Recent patents on nanotechnology

|September 19, 2023

概括

这项研究分析了2纳米长度的印化 (In-GaAs) 双门 (DG) MOSFET,证明了先进的CMOS设备的减少泄漏电流. 优化的设计提高了未来纳米技术和混合射频应用的性能.

科学领域:

半导体物理半导体物理
材料科学材料科学材料科学
电气工程电气工程

背景情况:

对基于晶圆的高性能印化 (In-GaAs) n型双门 (DG) MOSFET进行分析,门长为2 nm.
在混合射频应用中研究结构特征和设备参数之间的关系,例如开关电流比率 (I_ON/IOFF) 和传导率 (G_m).

研究的目的:

为了分析一个新的DG MOSFET架构的电气行为.
优化设备参数以提高射频应用中的性能.
探索高级CMOS和纳米技术应用的潜力.

主要方法:

在300K时使用非平衡绿色函数 (NEGF) 机制,用于DG MOSFET模拟.
采用La₂O₃作为门介电,其等效氧化物厚度 (EOT) 为1nm,源排气装置长度 (L_SD) 为45nm.
应用费米 - 迪拉克统计学来建模半导体 - 绝缘体接口上的电荷分布.

主要成果:

实现了4.52mA的最大排水电流 (ID_max) 和18.3×10^{7的出色的开启/关闭开关电流比 (I_ON/IOFF).}
获得了关键性能指标,包括最大电流密度 (J_max) 为52.4μA/m²,电子流动性 (μ_{n) 为1417cm²V^-1S^-1,和透导率 (G_m) 为3140μS/μm.}
使用NEGF形式主义,对电子密度和子频段能量配置文件进行了有效控制.

结论:

拟议的GD MOSFET设计显示出明显减少的泄漏电流.
这种设计非常适合先进的基于的固态CMOS设备和微电子.
该技术对纳米技术中的未来一代设备应用具有前景.

关键词:

费尔米迪拉克统计费尔米迪拉克统计在 NEGF 基金中,这是VLSI.平带电压的平面带电压.微电子技术的微电子纳米技术纳米技术

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