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基于Si/SiGe的垂直堆叠互补道FET的直流和交流特性

Narasimhulu Thoti^1,2, Yiming Li^1,2,3,4,5

¹Parallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.

|September 19, 2023

概括

本研究以计算方式研究了新的互补道场效应晶体管 (CTFET),发现它具有高度可扩展性,并为未来的电子产品提供了比传统TFET更好的电路性能.

科学领域:

半导体设备物理半导体设备物理
先进的晶体管技术技术
计算电子电子计算电子

背景情况:

传统的道场效应晶体管 (TFET) 面临着新兴技术节点的性能和可扩展性的局限性.
互补逻辑电路需要高效和可扩展的晶体管设计.

研究的目的:

通过计算来研究新型3D垂直堆叠互补道场效应晶体管 (CTFET) 的电气特性和性能.
评估CTFET的可扩展性和电路级性能,作为传统TFET的潜在替代品.

主要方法:

3D设备模拟CTFET与垂直堆叠的n-TFET和p-TFET使用网关全方位 (GAA) 纳米板 SiGe.Ge.
在工艺变化 (陷,温度) 下对直流特性进行分析.
基于关键尺寸和电路性能 (逆变器分析) 的可扩展性评估.

主要成果:

在关键维度方面,CTFET表现出高的可扩展性.
与传统应力Si GAA-TFET相比,CTFET-逆变器电路显示出明显改善的噪声边缘 (NM) 和电压增益.
性能分析显示,在低NM和高NM分别有12.5%和21.5%的改善.

结论:

对于新兴节点来说,CTFET是一种高度可扩展和有前途的技术,提供卓越的电路性能.
拟议的3D垂直堆叠CTFET设计是下一代集成电路传统TFET的可行替代方案.

关键词:

BTBT BTBT 这是一个很好的方法.在CFETET中,CFETET是指CFET.在GAA中,GAA是一般的.在PDP中,PDP是PDP.变频器变频器变频器变频器一个纳米板.噪声边缘噪声边缘

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