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Updated: Jul 16, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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使用BCl3等离子体衍生基的三维表面处理MoS2使用BCl3

Heesoo Lee1, Hoijoon Kim1, Kihyun Kim1

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

ACS applied materials & interfaces
|September 20, 2023
PubMed
概括

这项研究引入了用于二硫化 (MoS2) 表面的新型BCl3等离子处理,使高级场效应晶体管 (FET) 的高k介电物的均原子层沉积成为可能. 该方法确保损坏最小,对于下一代电子产品至关重要.

关键词:
在BCl3等离子体中在MoS2中,MoS2就是MoS2.原子层沉积的原子层沉积.高k介电介电的电压电阻.激进分子的激进分子表面功能化的功能化.

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