低温原子层沉积的使用二六碳-1-heptyne作为前体
Mathias Franz1, Mahnaz Safian Jouzdani2, Lysann Kaßner1
1Fraunhofer-Institute for Electronic Nano Systems ENAS, Technologie-Campus 3, 09126 Chemnitz, Germany.
Beilstein journal of nanotechnology
|September 22, 2023
概括
我们开发了一种低温原子层沉积 (ALD) 工艺,用于金属,使用一种新型前体和等离子体. 这种方法在晶圆层实现了统一的膜,这对于先进的电子应用至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 化学工程是化学工程的重要组成部分.
背景情况:
- 原子层沉积 (ALD) 允许精确的薄膜制造.
- 开发低温ALD过程对于敏感基板至关重要.
- 金属膜对于微电子和催化是必不可少的.
研究的目的:
- 为金属开发一种新的低温ALD工艺.
- 为了确定ALD窗口和沉积特征.
- 为了确认金属状态和薄膜的均性.
主要方法:
- 使用的迪科巴尔特六碳-1-赫丁 [Co2(CO) 6HCCC5H11]和血.
- 研究了前体和和膜生长行为.
- 使用X射线光电子光谱 (XPS) 进行化学状态分析.
主要成果:
- 建立了一个ALD窗口在50至110°C之间.
- 实现了~0.1 Å/周期的恒定沉积率.
- 确认金属沉积与均的晶圆层层涂层.
结论:
- 开发的ALD工艺可以精确控制金属薄膜.
- 低温操作适用于各种微电子应用.
- 该过程显示了可扩展制造的高潜力.
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