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Updated: Jul 16, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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在Nb2 GeTe4 /MoS2异构结构中中红外双极和单极线性极化检测

Jiayue Han1,2, Fakun Wang1, Yue Zhang3

  • 1Center for Optoelectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.

Advanced materials (Deerfield Beach, Fla.)
|September 22, 2023
PubMed
概括

这项研究介绍了一种使用二维范德瓦尔斯异构结构的新型宽带中红外极化光探测器. 该设备实现了高极化比和波长依赖的极性,用于先进的光学传感应用.

关键词:
2D范德瓦尔斯异构结构的二维结构不同类型的异型性异型性中红外光电探测器中红外光电探测器极化光检测 极化光检测

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

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Insensitive Nuclei Enhanced by Polarization Transfer (INEPT) is an advanced Nuclear Magnetic Resonance (NMR) technique specifically designed to detect and enhance the signals of low-abundance nuclei, such as carbon-13 and nitrogen-15, in small molecules. The fundamental principle behind INEPT is the transfer of polarization from a more abundant and highly polarizable nucleus, typically hydrogen-1, to the low-abundance nucleus of interest. This process effectively boosts the NMR signal of the...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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