微结构的表征,相位过渡,以及相位变换记忆材料的设备应用
Kai Jiang1,2, Shubing Li2, Fangfang Chen1
1School of Arts and Sciences, Shanghai Dianji University, Shanghai, China.
Science and technology of advanced materials
|September 25, 2023
概括
换相存储器 (PCM) 是一种新的非易失性存储技术. 本综述涵盖PCM材料,设备力学,建模和实验特征,解决当前的挑战和未来的研究方向.
科学领域:
- 材料科学 材料科学 材料科学
- 计算机工程 计算机工程
- 固态物理 固态物理
背景情况:
- 阶段变换记忆 (PCM) 是一种新兴的非易失性记忆技术.
- 对于神经形态计算和内存计算等先进的计算范式,PCM正在被探索.
- 现有的PCM设备在电力,热力和结构动力学方面面临挑战.
研究的目的:
- 提供相位变换记忆材料的全面审查.
- 详细介绍PCM设备操作的基本机制.
- 识别和讨论目前的挑战和未来的PCM研究途径.
主要方法:
- 对PCM材料和设备的现有文献的审查.
- 对阅读/写作操作的主要PCM设备机制的分析.
- 检查基于物理的建模和实验性表征技术.
主要成果:
- 各种PCM材料的详细概述.
- 解释控制PCM设备操作的物理原理.
- 确定电力,热力和结构动力学的关键问题.
- 建模和表征方法的总结.
结论:
- 对于下一代计算来说,PCM技术具有重大前景.
- 需要进一步的研究来解决PCM设备的动态和可靠性.
- 未来的工作应该集中在克服当前面临的挑战,以实现广泛采用.
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