在无形和无形上使用波动电子显微镜
Dražen Radić1, Martin Peterlechner1, Matthias Posselt2
1Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster, 48149 North Rhine-Westphalia, Germany.
概括
在无形和中,通过对电子束大小进行正常化方差峰值大小的分析,可靠地测量中等范围的顺序. 这种方法克服了在对持久性分析中看到的实验条件依赖性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 了解无形材料的中距离顺序 (MRO) 对它们的特性至关重要.
- 波动电子显微镜 (FEM) 中传统的对持久性分析对实验条件敏感.
研究的目的:
- 研究实验条件对无形 (a-Si) 和无形 (a-Ge) 中MRO分析的影响.
- 确定一种更可靠的方法来量化这些材料中的MRO.
主要方法:
- 使用了可变分辨率波动电子显微镜 (VR-FEM).
- 进行对对持久性和正常化方差峰值大小与电子束大小的分析.
- 在自我离子植入的a-Si和a-Ge.Ge上进行了实验.
主要成果:
- 对持久性分析显示了基于能量过和样本厚度的结构相关长度 (Λ) 的变化.
- 与电子束大小对比的规范变异峰值大小提供了更强大的MRO量化.
- 确定MRO范围为a-Ge的 (1.50 ± 0.50) nm和a-Si.20的 (1.10 ± 0.20) nm.
结论:
- 在FEM中常用的对持久性分析易受实验工件的影响.
- 将规范变异峰值大小与电子束大小对比为无形半导体中MRO评估提供了一种可靠的方法.
- 准确的MRO量化对于理解和定制无形和的特性至关重要.
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