在超薄的GdGe2金属烯薄膜中的磁性秩序和电子带结构之间的相互作用
Andrey V Matetskiy1,2, Valeria Milotti1, Polina M Sheverdyaeva1
1Istituto di Struttura della Materia-CNR (ISM-CNR), Strada Statale 14 km 163.5, 34149, Trieste, Italy. andrei.matetskii@trieste.ism.cnr.it.
Nanoscale
|September 26, 2023
概括
加多基曼化物 (GdGe2) 的抗铁磁性 (AFM) 基态在超薄膜中保持. 这种磁性结构的特点是平面内铁磁和AFM层间的合,经过实验证实了这一点.
科学领域:
- 固态物理 固态物理
- 材料科学是一种材料科学.
- 磁力学 磁力学 是一种
背景情况:
- 尺寸性显著影响固体系统中的磁性.
- 加多基曼化物 (GdGe2) 在其散装反铁磁 (AFM) 状态下表现出一个准层次的缺陷结构.
研究的目的:
- 理论预测和实验验证超薄GdGe2膜的磁性基态.
- 调查缩小维度对GdGe2.2的磁性排序的影响.
主要方法:
- * Ab initio * 计算以建模电子和磁性结构.
- 角度分辨率光辐射光谱学 (ARPES) 探测电子带结构.
- 超薄GdGe2,DyGe2和GdSi2膜的实验合成和表征.
主要成果:
- 超薄的GdGe2薄膜保留了AFM的基本状态,显示了在平面上的铁磁内层和AFM层间的合.
- ARPES发现AFM诱导的带分裂成2和3个GdGe2三层膜,这些膜在Nel温度以上消失.
- 用DyGe2和GdSi2薄膜进行的比较研究证实了观察到的带分裂的磁性起源.
结论:
- GdGe2的抗铁磁基本状态是强大的,直到超薄膜的极限.
- 在超薄金属烯薄膜中观察到的磁性不同于之前的报告,归因于未补偿的磁矩.
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