基于HfO2的memristor通过嵌入Al2O3的电子突触模拟的研究
Jinfu Lin1, Hongxia Liu1, Shulong Wang1
1The Key Laboratory for Wide Bandgap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China.
Nanotechnology
|September 26, 2023
概括
这项研究研究了用于神经形态计算的三层memristor. 嵌入氧化层显著提高了设备可靠性,突触线性,并降低了高级计算应用的操作电压.
科学领域:
- 材料科学与工程 材料科学与工程
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 神经形态计算需要高效的突触模拟,引发对memristors的兴趣.
- 现有的memristor在多层电阻开关,可靠性和功耗方面面临着挑战.
- 为了提高性能,研究了Pt/Al2O3/HfO2/Al2O3/Ti三层记忆体结构.
研究的目的:
- 为了研究电子突触可塑性和双极切换行为,一个新的三层memristor.
- 分析嵌入氧化 (Al2O3) 层对设备性能的影响.
- 了解电子传输机制及其对电阻切换特性的影响.
主要方法:
- Pt/Al2O32 nm) /HfO210 nm) /Al2O32 nm) /Ti三层记忆体的制造和特征.
- 评估电阻开关性能,包括可靠性 (104周期),电阻窗口 (>103) 和线性.
- 使用直流扫描分析电子传输机制 (福勒-诺德海姆道,肖特基辐射).
主要成果:
- 在两个电极上嵌入Al2O3层,提高了设备可靠性,电阻窗口,突触线性和降低了工作电压.
- 顶部Al2O3嵌入产生了更高的统一性和长期增强 (LTP) 线性.
- 下部Al2O3嵌入了降低的操作电流 (~10μA) 和增强的长期压缩 (LTD) 线性.
- 电子传输有所变化:在顶部电极 (低电阻状态) 处的Fowler-Nordheim道化,在底部电极 (高电阻状态) 处的Schottky发射.
结论:
- 三层Al2O3/HfO2/Al2O3记忆体成功地展示了突触特性,如增强,抑制和尖端时间依赖的可塑性.
- 这种memristor设计显示了高性能神经形态计算应用的巨大潜力.
- 对Al2O3层的战略性放置为特定应用提供了对memristor特征的可调节控制.
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