由RF喷射功率引起的Cu-Se薄膜的同质性和固态度诱导的电学和光学特性
Sara Kim1, Yong-Seok Lee1, Nam-Hoon Kim1
1Department of Electrical Engineering, Chosun University, Gwangju 61452, Republic of Korea.
Materials (Basel, Switzerland)
|September 28, 2023
概括
在铜 (Cu-Se) 薄膜中优化喷射功率可以提高均性和石化度. 这种控制可以减少缺陷和载体度,改善电子应用的薄膜质量.
科学领域:
- 材料科学 材料科学 材料科学
- 薄膜沉积的情况
- 半导体物理 半导体物理
背景情况:
- 铜 (Cu-Se) 薄膜是具有潜在应用的P型半导体.
- 控制膜的特性,如同质性和石化度,对于设备的性能至关重要.
- 射频磁铁喷射是一种常见的沉积技术.
研究的目的:
- 为了研究喷射功率对Cu-Se薄膜同质性和石化学的影响.
- 了解喷射功率对电气和光学性能的影响.
- 为了确定最佳的喷条件,以提高片质量.
主要方法:
- 在室温下使用CuSe2目标进行射频磁铁喷射.
- 薄膜形态,微观结构和化学成分的系统表征.
- X射线光电子光谱 (XPS) 用于深度分析和化学键分析.
主要成果:
- 喷射功率显著影响Cu-Se薄膜的均性和石化学.
- 在非常低的和非常高的喷射功率下,偏离静态度的偏差会增加.
- 优化的喷射功率产生了更均的薄膜,改善了固体测量和降低了载体度,尽管固有的Se缺乏.
结论:
- 喷射功率是控制Cu-Se薄膜特性的一个关键参数.
- 优化喷射功率导致增强的薄膜固体测量和减少缺陷.
- 进一步的研究可能将重点放在减轻Se缺乏症,以获得更好的性能.
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