相关实验视频

Updated: Jul 15, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

陷行为对InAlAs/InGaAs中的变态缓冲器的可靠性不稳定性的影响MHEMT对GaAs的MHEMT

Ki-Yong Shin¹, Ju-Won Shin¹, Walid Amir¹

¹Department of Electrical, Electronic and Computer Engineering, University of Ulsan, Ulsan 44610, Republic of Korea.

Materials (Basel, Switzerland)

|September 28, 2023

概括

变态高电子移动性晶体管 (MHEMT) 与基于InP的LM-HEMT具有可比的直流/射频性能,但受到短暂的充电效应和更高的散装陷密度的影响,影响了排水电流的稳定性.

科学领域:

材料科学材料科学材料科学
半导体设备物理半导体设备物理
电子工程电子工程

背景情况:

在GaAs基板上培养的变态高电子移动性晶体管 (MHEMT) 提供了潜在的优势.
与网格匹配的高电子移动性晶体管 (LM-HEMT) 的比较对于性能评估至关重要.
了解缓冲层的影响是优化MHEMT性能的关键.

研究的目的:

评估变态缓冲对MHEMT特征的影响.
将MHEMT性能与基于InP的LM-HEMTs进行比较.
识别和量化影响MHEMT设备稳定性的陷效应.

主要方法:

直流 (DC) 和无线电频率 (RF) 性能测量.
脉冲I-V测量以评估暂时充电效应.
低频噪声 (LFN) 分析和载体数波动 (CNF) 模型用于陷密度提取.

主要成果:

MHEMT表现出与LM-HEMT相似的直流/射频特征,但具有更高的离位电流.
脉冲I-V测量显示,由于快速短暂充电,MHEMT的排水电流降解显著.
LFN分析证实,散装陷是主要的机制,MHEMT显示大量陷密度 (3.56 × 10^17 eV−1·cm−3) 与LM-HEMT (3.27 × 10^16 eV−1·cm−3) 相比显著更高.

结论:

MHEMT中的变态缓冲器有助于增加散装陷密度和短暂的充电效应.
这些影响导致排水电流的降解,影响设备的稳定性.
进一步优化变态缓冲器是必要的,以减轻陷和提高MHEMT的可靠性.

关键词:

1/f (低频) 噪声 (低频) 噪声马赫姆特是什么意思马赫姆特快速过渡的短暂的快速过渡脉冲的IVV的时间.可靠性的可靠性陷陷是一个陷.

更多相关视频

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Scanning-probe Single-electron Capacitance Spectroscopy

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

相关概念视频

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

Carrier Generation and Recombination

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...