基于TaOx的电阻式记忆装置的双重形成机制及其突触应用
Dongyeol Ju1, Sunghun Kim1, Subaek Lee1
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Materials (Basel, Switzerland)
|September 28, 2023
概括
这项研究探讨了Pt/TaOx/InOx/ITO设备中的双极电阻切换,证明了潜在的神经形态应用的新型双形成过程和氧空位迁移机制.
科学领域:
- 材料科学 材料科学 材料科学
- 固态电子 固态电子
- 纳米技术 纳米技术
背景情况:
- 电阻随机存储器 (RRAM) 设备对于下一代计算至关重要.
- 了解复杂的氧化物结构中的切换机制对于设备优化至关重要.
研究的目的:
- 为了研究Pt/TaOx/InOx/ITO设备的双极电阻切换特性.
- 为了阐明底层导电机制,并探索多层细胞的能力.
- 评估神经形态计算应用的潜力.
主要方法:
- Pt/TaOx/InOx/ITO器件的制造和特征. Pt/TaOx/InOx/ITO器件的制造和特征.
- 传输电子显微镜 (TEM) 和X射线光电子光谱 (XPS) 用于材料分析.
- 进行DC扫描和脉冲测量,以评估切换行为和可塑性.
主要成果:
- 展示了一种独特的两步成型过程 (双重成型现象) 和在DC扫描下自我合规性.
- 基于氧气空位迁移的拟议导电机制.
- 通过改变重置电压和合规电流来评估多层电池特性.
- 在脉冲测量下成功测试了潜能,抑郁,峰值时间依赖的可塑性和峰值速率依赖的可塑性.
结论:
- 该Pt/TaOx/InOx/ITO设备显示出有前途的双极电阻切换特性.
- 氧空位迁移被确定为电阻切换的关键机制.
- 该设备展示了多层存储和神经形态计算应用的潜力.
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