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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

578
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
578
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

296
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
296
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

560
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
560
P-N junction01:11

P-N junction

559
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
559
Schottky Barrier Diode01:27

Schottky Barrier Diode

390
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
390
Diode: Forward bias01:20

Diode: Forward bias

1.1K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.1K

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相关实验视频

Updated: Jul 15, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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垂直钻石p-n连接二极管与阶段边缘终结结构通过模拟设计.

Guangshuo Cai1, Caoyuan Mu2, Jiaosheng Li1

  • 1School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China.

Micromachines
|September 28, 2023
PubMed
概括

模拟了具有步骤边缘终结的钻石垂直p-n连接二极管. 结合结点终端延伸,通过优化电场分布,显著改善了故障电压和设备性能.

关键词:
这是一个钻石钻石.交叉点终端延伸的延伸在 p-n 连接二极管.模拟模拟是指一个模拟模拟器.

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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科学领域:

  • 材料科学 材料科学 材料科学
  • 半导体物理 半导体物理
  • 设备工程 设备工程

背景情况:

  • 垂直p-n连接二极管是重要的半导体设备.
  • 边缘终端对于二极管的高压性能至关重要.
  • 钻石为动力电子提供了卓越的材料性能.

研究的目的:

  • 为了研究以钻石为基础的垂直p-n连接二极管与步骤边缘终结.
  • 为了提高这些二极管的故障电压和整体性能.
  • 分析交叉点终端延伸对电场分布的影响.

主要方法:

  • 使用Silvaco TCAD (版本5.0.10.R) 进行设备模拟.
  • 研究的二极管具有传统的,一步边缘,并结合结点终端延伸.
  • 优化了交叉点终端延伸的结构参数.

主要成果:

  • 阶段边缘终结抑制了电场拥挤,但对前方特征的影响最小.
  • 简单的步骤边缘终结导致了比理想的平行平面结构更低的故障电压.
  • 结合结点终端延伸与步骤边缘终端实现了重叠的耗尽区域,均的电场和增强的故障电压.

结论:

  • 阶段边缘终结在管理钻石二极管中的电场拥挤方面是有效的.
  • 结合结点终端延伸与步骤边缘终端是一种可行的策略,可以显著提高故障电压.
  • 优化的钻石垂直p-n连接二极管与先进的终端结构显示出高性能应用的希望.