对最后一个具有不同含量的InGaN/GaN量子井的载体捕获能力的模拟研究,用于发射黄色光的InGaN/GaN多个量子井
Wei Liu1, Zeyu Liu1, Hengyan Zhao1
1School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, China.
Micromachines
|September 28, 2023
概括
这项研究调查了发出黄色光的印化/化 (InGaN/GaN) 多个量子井 (MQW),该研究发现更高的In含量可以提高低电流的效率,但由于Auger重组和电子泄漏,导致高电流下降.
科学领域:
- 固态物理 固态物理
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
背景情况:
- 基于GaN的LED对于蓝色/绿色光是高效的,但与黄色光的效率相斗争.
- 在黄色的InGaN/GaN多个量子井 (MQWs) 中,低发光效率限制了设备的应用.
- 了解内容分发对于优化黄色光辐射至关重要.
研究的目的:
- 为了数值地研究黄色InGaN/GaN MQWs的电发光,其中的In含量不同.
- 揭示内容分发对载体动态和光辐射的影响背后的物理机制.
- 确定改善黄色MQW性能的策略.
主要方法:
- 在最终量子井中对具有不同In含量的InGaN/GaNMQW进行数值模拟.
- 在不同的注入电流条件下,电色的表征.
- 对载体捕获,重组 (辐射和奥格尔) 和电子泄漏的分析.
主要成果:
- 在低注入电流下,增加的In含量通过改善载体捕获和辐射再组合来提高发光效率.
- 在高注入电流下,更高的In含量会导致效率下降.
- 滴滴归因于高含量的MQW中Auger重组和电子泄漏的增加.
结论:
- 优化最终的InGaN量子井中的含量对于发射黄色光的设备至关重要.
- 通过增加含量可以提高低电流效率,但这加剧了高电流下垂.
- 进一步的研究应该集中在减轻有效的黄色InGaN/GaNMQWs的Auger重组和电子泄漏.
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