一个54μW的CMOS自动剪裁带隙参考 (ATBGR) 实现90dB的PSRR,用于人工智能物 (AIoT) 芯片
Balamahesn Poongan1, Jagadheswaran Rajendran1, Selvakumar Mariappan1
1Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Bayan Lepas 11900, Malaysia.
Micromachines
|September 28, 2023
概括
本研究介绍了AIoT芯片的自动剪裁CMOS带隙参考电路 (ATBGR),实现稳定的1.25V参考电压,具有出色的温度稳定性和电源拒绝.
科学领域:
- 集成电路 集成电路
- 模拟电路设计 模拟电路设计
- 半导体设备 半导体设备
背景情况:
- 带隙参考电路 (BGR) 对于集成电路中稳定的电压参考至关重要.
- 工艺变化和温度波动对BGR性能产生重大影响.
- 物体人工智能 (AIoT) 应用需要高度稳定和高功率的参考电压.
研究的目的:
- 为AIoT芯片提供一个自动修剪的CMOS带隙参考电路 (ATBGR),具有增强的电源拒绝比率 (PSRR).
- 为了在广泛的输入电压范围和温度谱中实现稳定的1.25V参考电压.
- 为了最大限度地减少工艺变化的影响BGR的准确性.
主要方法:
- 在BGR中集成一个自动修剪电路与PTAT电阻.
- 使用四对平行电阻对与PMOS开关进行修剪.
- 使用级联的PMOS通用网关对实现一个PSRR增强电路.
- 一级温度补偿技术用于电压稳定.
主要成果:
- 在-40°C至125°C的温度范围内,达到9.99ppm/°C的平均温度系数.
- 在100MHz时获得了90dB的电源拒绝比率 (PSRR).
- 在1.65V至4.5V的输入电压中,证明了稳定的1.25V参考电压.
- 在室温下54.12μW的低功耗.
结论:
- 拟议的ATBGR有效地弥补了工艺变化和温度波动.
- 集成的自动修剪和PSRR增强电路显著提高了参考电压稳定性.
- ATBGR非常适合要求精确可靠的电压参考要求的AIoT应用.
相关概念视频
MOSFET Amplifiers
176
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
176
Biasing of Metal-Semiconductor Junctions
274
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
274
Biasing of FET
305
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
305
MOSFET: Enhancement Mode
374
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
374
MOS Capacitor
825
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
825
MOSFET
500
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
500


