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Updated: Jul 15, 2025

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一种埋藏的热轨 (BTR) 技术,以改善辅助场效应晶体管 (CFET) 的电热特性

Zhecheng Pan1, Tao Liu1, Jingwen Yang1

  • 1School of Microelectronics, Fudan University, Shanghai 200433, China.

Micromachines
|September 28, 2023
PubMed
概括

互补场效应晶体管 (CFET) 面临严重的自我加热. 埋藏热轨 (BTR) 技术显著降低了热阻,并提高了堆叠的N型FET (NFET) 和P型FET (PFET) 设备的性能.

关键词:
埋藏的动力轨道 (BPR)互补的场效应晶体管 (CFET)电力输送网络 (PDN) 提供电力自己加热效应 (SHE)技术计算机辅助设计 (TCAD)

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