在3D NAND闪存中调查甲板之间的连接方案
Jianquan Jia1,2, Lei Jin1,2, Kaikai You1,2
1Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Micromachines
|September 28, 2023
概括
在3D NAND闪存中进行双层堆叠可以提高存储密度,但会影响单元的可靠性. 没有多插头的连接方案会导致电池分解,而多插头方案会减少通道电流并增加变化.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 3D NAND闪存技术利用双层堆叠来增加存储密度.
- 甲板之间的连接方案对于双层甲板结构的可靠性至关重要.
- 3D NAND闪存中的深孔蚀刻挑战需要先进的堆叠解决方案.
研究的目的:
- 调查不同甲板间连接方案对3D NAND闪电池可靠性的影响.
- 分析与各种连接策略相关的电气特性和故障机制.
- 为双层3D NAND闪存提出可靠性增强方法.
主要方法:
- 细胞可靠性指标的实验数据分析.
- 对电场分布和电流流量的模拟分析.
- 研究结构变化和过程对细胞完整性的影响.
主要成果:
- 没有多插头的连接方案导致局部电场增强,导致门通道故障和数据保留问题在下层顶层电池中.
- 这些细胞由于对齐错误而遭受二次蚀刻的结构损伤.
- 多插头连接方案减少了通道和电流,并增加了由于对通道逆转的屏蔽效应而导致的电流变化.
结论:
- 对于非聚插件方案,增加甲板间氧化物厚度和使用虚拟单元可以提高可靠性.
- 对于多插头方案,建议对插头进行N型兴奋剂,以减轻电流异常并提高设备性能.
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