在芯片上集成的短波红外InGaAs探测器与低波长极化格子集成
Huijuan Huang1,2,3, Yizhen Yu1,2, Xue Li1,2
1State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Nanomaterials (Basel, Switzerland)
|September 28, 2023
概括
这项研究介绍了一种新的甲 (InGaAs) 焦平面阵列探测器,与线性极化格子 (LPG) 集成. 这种先进的探测器实现了高灭绝比,用于改进短波红外偏振成像.
科学领域:
- 光电学是指光电子产品.
- 红外成像技术 红外成像技术
- 纳米光子学 纳米光子学
背景情况:
- 短波红外 (SWIR) 极化成像增强了目标背景对比度,以改善检测.
- 甲 (InGaAs) 焦平面阵列 (FPA) 探测器提供紧,实时和稳定的极化成像.
- 现有的超像素极化集成探测器由于纳米结构不匹配和交叉声波,因此存在较低的灭绝比率 (ER).
研究的目的:
- 开发和测试一个新的InGaAs FPA检测器,与线性极化格子 (LPG) 集成.
- 为了评估整个SWIR频段的集成探测器的性能和灭绝比 (ER).
- 调查限制ER在网格集成InGaAsFPA中的交叉通道的来源.
主要方法:
- 一个1024 × 4 InGaAs FPA检测器的制造与芯片上LPG集成.
- 检测器在0.9-1.7μm频段的性能测试.
- 对网格集成的InGaAs像素进行光学模拟,以分析交叉语音和ER限制.
主要成果:
- 集成探测器在0.9-1.7微米SWIR频段表现出良好的性能.
- 实现了高灭绝比 (ER):在1064nm时达到22:1,在1310nm时达到29:1,在1550nm时达到46:1.
- 确定InP基板中的光散射是交叉通话的主要原因,格制造偏差进一步加剧了这种情况.
结论:
- 开发的InGaAs FPA与集成LPG显示出高质量的SWIR极化成像的巨大潜力.
- 了解交叉通话机制对于优化未来探测器设计至关重要.
- 制造工艺的进一步改进可以提高灭绝率和成像性能.
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