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Updated: Jun 26, 2026

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在晶体离子液体门单极MoTe2/h-BN场效应晶体管中形成高导电接口

Kamoladdin Saidov1,2,3, Jamoliddin Razzokov4,5,6, Odilkhuja Parpiev7

  • 1Department of Electronics and Radio Engineering, Tashkent University of Information Technologies, Tashkent 100200, Uzbekistan.

Nanomaterials (Basel, Switzerland)
|September 28, 2023
PubMed
概括

用离子液门制造的二甲 (MoTe2) 异构结构显示了增强的电特性. 这种离子液门场效应晶体管 (ILG FET) 方法显著提高了载体的移动性,并允许控制相位转换.

关键词:
MoTe2 / h-BN 场效应晶体管转移费用 转移费用 转移费用 转移费用离子 - 液体隔离门通过导电的电流.

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