Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

637
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
637
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

373
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
373
MOS Capacitor01:25

MOS Capacitor

825
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
825

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

A retrospective analysis for early-stage non-endometrioid endometrial cancers.

Radiation oncology journal·2026
Same author

Prognostic impact of radiotherapy dose to the axilla in cN + /ypN0 breast cancer after primary systemic therapy and sentinel lymph node biopsy: toward true de-escalation of axillary management.

Breast cancer (Tokyo, Japan)·2026
Same author

Feasibility of omitting regional nodal irradiation in cT1-2N1 breast cancer with ypN1 disease after neoadjuvant chemotherapy (KROG 21-06).

Clinical and translational radiation oncology·2026
Same author

Metabolic reprogramming in hepatic ischemia-reperfusion injury: crosstalk between mitochondria, lipid metabolism, and ferroptosis.

Biochemical and biophysical research communications·2026
Same author

Development of a resistance screening method for sweetpotato foot rot caused by <i>Diaporthe destruens</i>.

Plant disease·2026
Same author

Initial and Repeat Metastasis-Directed Therapy in Systemic Therapy-Naïve Oligometastatic Renal Cell Carcinoma: Oncologic Outcomes and Risk-Based Stratification.

Annals of surgical oncology·2026

相关实验视频

Updated: Jul 15, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

8.8K

原子薄的无形氧化半导体薄膜使用高性能氧化物晶体管的溶液工艺开发.

Jun-Hyeong Park1, Won Park1, Jeong-Hyeon Na1

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|September 28, 2023
PubMed
概括

原子薄的氧化半导体是使用高性能薄膜晶体管 (TFT) 的溶液工艺开发的. 优化的3.12nm氧化TFT实现了新一代电子产品的高流动性和稳定性.

关键词:
无形氧化物半导体半导体高性能的高性能性能.解决方案的过程 解决方案的过程薄膜晶体管的使用方法超薄通道的超薄通道

更多相关视频

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition
10:27

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Published on: February 27, 2013

15.6K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.1K

相关实验视频

Last Updated: Jul 15, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

8.8K
Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition
10:27

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Published on: February 27, 2013

15.6K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.1K

科学领域:

  • 材料科学 材料科学 材料科学
  • 电子工程 电子工程
  • 纳米技术纳米技术

背景情况:

  • 高性能氧化物晶体管对于显示器和传感器等现代电子设备至关重要.
  • 原子薄的半导体是推动晶体管技术发展的关键.

研究的目的:

  • 使用溶液工艺开发用于薄膜晶体管 (TFT) 的高性能,原子薄的氧化 (InO) 半导体.
  • 通过控制溶液度以增强设备特性来调整InO的特性.

主要方法:

  • 通过溶液工艺制造原子薄的InO半导体.
  • 通过控制溶液度来调整 InO 带隙和厚度.
  • 描述TFT性能,包括场效应移动性和开/关电流比.

主要成果:

  • 实现了高场效移动性 (13.95 cm2 V−1 s−1) 和开/关电流比 (1.42 × 1010),厚度为 3.12 nm 的 InO.
  • 证明了充电传输在优化 InO 薄膜中以透导电为主.
  • 呈现出优越的门偏差应力稳定性,无论是积极的还是消极的偏差.

结论:

  • 通过溶液处理,原子薄的INO TFTs为高性能电子设备提供了可行的途径.
  • 优化的 InO 厚度和性能对于实现卓越的晶体管特性至关重要.
  • 这些发现为可扩展,高通量制造先进晶体管铺平了道路.