SnO,.

Muhammad Ismail1, Chandreswar Mahata1, Myounggon Kang2

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

PubMed
概括

这项研究介绍了一种用于神经形态计算的新型氧化 (SnOx) 记忆装置. 该设备表现出卓越的耐力,保留和多层次的阻力状态,模仿高级AI应用程序的突触功能.

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