一个无形的原生氧化物外为高偏差应力稳定性纳米线突触晶体管
Xinming Zhuang1,2, Zixu Sa1, Jie Zhang1
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|September 28, 2023
概括
在III-V半导体上的不均的原生氧化物外阻碍了集成电路. 在抗氧化物 (GaSb) 纳米线场效应晶体管 (FET) 上,氧化 (GaOx) 外的热化显著提高了稳定性,并实现了突触功能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 半导体物理 半导体物理
背景情况:
- 在III-V半导体上的不均的原生氧化物外降低了电气性能,阻碍了先进的集成电路.
- 抗氧化物 (GaSb) 纳米线 (NW) 是下一代电子产品的前景,但其表面不稳定.
研究的目的:
- 通过现场热化利用原生氧化 (GaOx) 来增强GaSb纳米线场效应晶体管 (FET).
- 为了研究由此产生的偏差压力稳定性和神经形态计算应用的突触行为.
主要方法:
- 一个简单的现场热回火工艺被应用到具有本地GaOx外的GaSb NW.
- 确定了优化回火时间 (5分钟),以实现卓越的设备性能.
- 在长时间的门偏差应力下评估了偏差应力稳定性.
- 化NW FETs被测试了突触行为,包括可塑性和学习稳定性.
主要成果:
- 最佳化显著提高了偏向应力稳定性,在60分钟的门偏向后,将值电压变化 (ΔVth) 从8.2V降至0.54V.
- 化GaSb NW FETs表现出强大的突触功能,包括短期和长期可塑性,以及依赖尖端时间的可塑性.
- 在GaOx外中的移动氧离子被确定为抵消捕获状态的关键,增强稳定性和电荷保留.
结论:
- 本地GaOx外的现场热是一种有效的策略,用于制造高性能和稳定的GaSb NW FET.
- 这些稳定的FET显示出潜力作为可充电的无介电突触器件用于神经形态计算.
- 这种方法提供了一种利用原生氧化物外的新方法,以克服半导体设备的稳定性挑战.
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