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Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

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Updated: Jul 15, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

作为一个有效的Cu扩散屏障,MoS₂具有后端兼容的过程.

Chi-Yuan Kuo¹, Ya-Ting Chang¹, Yu-Ting Huang¹

¹Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan.

ACS applied materials & interfaces

|September 28, 2023

概括

二硫化物 (MoS₂) 显示出作为一个先进的扩散屏障和内的前景. 一种新的微波等离子增强硫化 (MW-PES) 工艺使低温应用成为可能,在设备寿命和铜 (Cu) 电路电阻方面,其性能优于 (Ta) 等当前材料.

关键词:

2D 材料是二维材料.符合BEOL的兼容性.在 TMDCDC 中,您可以使用:屏障层是一种屏障层.低热预算的热预算很低.

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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科学领域:

材料科学材料科学材料科学
半导体技术半导体技术
纳米技术纳米技术

背景情况:

扩散屏障和内对于防止微电子设备中的材料相互扩散至关重要.
像 (Ta) 这样的当前材料在性能和与先进制造工艺的兼容性方面面临限制.
二硫化物 (MoS) 是一种2D材料,由于其独特的特性,在电子领域具有潜在的应用.

研究的目的:

为了证明二硫化 (MoS) 是一个优越的扩散屏障和外材料.
开发和评估一种新的微波等离子增强硫化 (MW-PES) 工艺,用于MoS₂沉积.
评估MW-PES MoS₂在屏障特性,热稳定性,粘附性和对电路电阻的影响方面的性能.

主要方法:

开发微波等离子增强硫化 (MW-PES) 技术,在低温下直接在基板上生长MoS.
用于屏障和内应用的MW-PES MoS₂膜的表征.
时间依赖的介电分解 (TDDB) 测量以评估屏障性能.
对铜 (Cu) 连接器的粘附和湿度的分析.
评估热稳定性和对电路电阻的影响.

主要成果:

MW-PES工艺允许快速,低温的MoS₂沉积与后端线 (BEOL) 制造相兼容.
与 (Ta) 相比,MoS₂具有优越的扩散屏障特性,将设备寿命延长约45.2倍.
MoS₂表现出极好的热稳定性,保持其屏障完整性.
MoS₂作为一种有效的层,增强铜 (Cu) 的粘附性和可湿性,减少表面散射,降低电路电阻.

结论:

由MW-PES制备的二硫化 (MoS₂) 是一种高效的扩散屏障和微电子应用的内.
开发的MW-PES工艺提供了一个低温,可扩展的解决方案,用于将MoS集成到半导体制造中.
MoS₂是传统材料的有希望的替代品,可以提高设备的可靠性和性能.