在应力EuVO2H薄膜中由间位电荷转移引起的大垂直磁异位
Morito Namba1, Hiroshi Takatsu1, Riho Mikita1
1Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan.
Journal of the American Chemical Society
|September 28, 2023
概括
研究人员通过施加压力或应变诱导了氧化矿的间接电荷转移 (ICT). 这种离子方法增强了EuVO2H的铁磁性和磁性异性,为新材料的功能铺平了道路.
科学领域:
- 材料科学
- 固态化学
- 凝聚物质物理学
背景情况:
- 矿氧化物 (ABO3) 在材料科学中至关重要,其间的电荷转移 (ICT) 诱导了负热膨胀等独特现象.
- 目前实现ICT的方法依赖于电离子替代或排序,限制了新功能的范围.
研究的目的:
- 在矿材料中演示一种离子方法.
- 研究ICT对EuVO2H的磁性和导电性能的影响.
主要方法:
- 氧化EuVO2H的合成和表征
- 对大量EuVO2H施加外部压力,对薄膜施加压力.
- 测量磁过渡温度 (TC) 和磁异性.
主要成果:
- 大量EuVO2H具有铁磁绝缘行为,TC为10K.
- 压力/应变诱导ICT从EuH到VO2层,使VO2层具有导电性.
- ICT增加了TC (高达4倍) 并诱导了薄膜 (<100nm) 中显著的垂直磁性异质.
结论:
- 使用EuVO2H的阳离子策略成功诱导ICT,为阴离子方法提供了替代方案.
- 观察到的磁性和导电性质的变化为设计功能性材料开辟了新的途径.
- 交替的过渡金属/稀土层与异离子为新材料功能提供了多功能平台.
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