氧诱导晶格菌株用于高性能有机晶体管,具有增强的稳定性
Shougang Sun1, Jie Zhu1, Zhongwu Wang1
1Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China.
Advanced materials (Deerfield Beach, Fla.)
|September 30, 2023
概括
氧气诱导的格子应变策略显著提高有机半导体 (OSC) 的性能. 这种方法可以提高有机场效应晶体管 (OFET) 的移动性和稳定性,从而实现实际应用.
科学领域:
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
- 半导体物理 半导体物理
背景情况:
- 有机半导体 (OSC) 提供低成本和灵活性,但在移动性和稳定性方面面临挑战.
- 同时提高OSC的移动性和稳定性是很困难的,因为分子间相互作用较弱.
研究的目的:
- 制定一种新的战略,以加强OSC的流动性和稳定性.
- 为了研究氧气诱导的格子应变对OSC性能的影响.
主要方法:
- 开发一种由氧诱导的晶格应变 (OILS) 策略.
- 制造和特征的dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) 有机场效应晶体管 (OFETs) 的.
- 实验验证和理论计算以了解应变效应.
主要成果:
- 实现了15.3cm2V-1s-1的最大移动性,并将DNTT OFETs的接触电阻降低到25.5 Ω cm.
- 显著提高了热稳定性,并获得了≈3.4 × 104 W cm−2.2. 的记录和功率密度.
- 证明了该战略对n型和p型OSC的普遍性.
结论:
- 该OILS战略有效地提高OSC的流动性和稳定性通过格子压缩应变.
- 这种方法为开发高性能有机电子设备提供了新的途径.
- 这些发现为OSC在各种电子设备中的实际应用铺平了道路.
相关概念视频
MOSFET: Enhancement Mode
374
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
374
Biasing of Metal-Semiconductor Junctions
274
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
274
Metal-Semiconductor Junctions
373
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
373
Characteristics of MOSFET
411
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
411


