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Updated: Jul 15, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

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使用Pyrene-SV模型对单空 (SV) 石墨烯缺陷中的电子状态进行高级多重引用调查

Reed Nieman1, Vytor P Oliveira2, Bhumika Jayee1

  • 1Department of Chemistry and Biochemistry, Texas Tech University Lubbock, Texas 79409-1061, United States.

The journal of physical chemistry. A
|October 3, 2023
PubMed
概括

石墨烯的单碳空位 (SV) 缺陷导致非平面结构. 计算显示,这些非平面结构比平面结构更稳定,在高度变形的结构中观察到显著的能量稳定.

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