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Updated: Jul 15, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

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在双价酸盐合的氧化物中,点缺陷形成和离子导电的机制:第一原理和实验研究

Kazuki Shitara1,2, Akihide Kuwabara1, Naoyoshi Nunotani3

  • 1Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Nagoya, Aichi 456-8587, Japan. kazuki_shitara@jfcc.or.jp.

Dalton transactions (Cambridge, England : 2003)
|October 4, 2023
PubMed
概括

这项研究调查了M2+兴奋剂的氧化 (LaOBr),这项研究揭示了离子空缺是离子导电的关键. 用Mg2+和Zn2+进行兴奋剂会导致原子移位,影响离子迁移路径.

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