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Updated: Jul 15, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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Si-C-N 结构的硬度和电子特性

Shuai Chen1, Xiaogang Guo1, Hefei Li1

  • 1Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China. hjl@ysu.edu.cn.

Physical chemistry chemical physics : PCCP
|October 4, 2023
PubMed
概括

三种新的碳化物 (Si-C-N) 结构具有独特的导电性和硬度特性. SiC3N3和SiC7N6是导电硬材料,而SiC13N14是一个准超硬半导体.

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