Spin

Gaurav Verma1,2, Sandeep Soni1, Brajesh Kumar Kaushik1

  • 1Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand-247667, India.

Nanotechnology
|October 5, 2023
PubMed
概括

我们开发了一种新的旋转轨道扭矩磁随机访问存储器 (SOT-DLC MRAM) 设计,用于节能的图像边缘检测. 与传统的CMOS设计相比,这种内存计算方法显著降低了功耗和面积.