晶圆尺度可转移的GaN通过六边形化为灵活发光二极管实现
Lulu Wang1,2, Shenyuan Yang2,3, Fan Zhou4
1Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Small (Weinheim an der Bergstrasse, Germany)
|October 6, 2023
概括
高质量的化 (GaN) 薄膜使用二维材料生长和转移,使灵活的发光二极管 (LED) 能够提高性能和可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术纳米技术
背景情况:
- 使用二维材料的范德瓦尔斯表对于传输高质量的III-化物半导体至关重要.
- 开发具有低位位密度的晶圆尺度可转移的GaN上层对于先进的电子应用是必不可少的.
研究的目的:
- 为了展示晶圆尺度可转移的GaN上层,使用复合材料缓冲层用于柔性LED.
- 通过第一原则计算,研究GaN和AlN在六角化 (h-BN) 上的核化和结合机制.
- 为在h-BN.培养的III-化物提出一个应变放松模型.
主要方法:
- 使用化 (AlN) /六边形化 (h-BN) 复合缓冲层进行GaN的表化.
- 使用第一原理计算来研究GaN和AlN核和h-BN上的结合.
- 应用机械剥皮来转移单晶GaN薄膜和制造柔性LED.
主要成果:
- 实现了具有低位移密度的晶圆尺度可转移的GaN上层.
- 与Ga原子相比,在O2等离子体处理的h-BN上,Al原子的吸附能被证实更高.
- 展示了基于InGaN的灵活LED,约66%的发光增强和转移后的可靠性提高.
结论:
- 开发了一种使用III-化物和2D材料制造柔性半导体设备的新方法.
- AlN/h-BN复合缓冲层有效地管理GaN表层和转移期间的应变.
- 拟议的应变放松模型提供了对h-BN.N的III-化物增长的见解.
相关概念视频
01:11P-N junction
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...