对于高性能应用的5nm以下双层Ga2O3晶体管的量子传输模拟
Penghui Li1, Linpeng Dong1, Bo Peng2
1Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test, Xi'an Technological University, Xi'an 710032, People's Republic of China.
概括
双层氧化物 (BL Ga2O3) 显示了5nm以下晶体管的潜力. 这种二维半导体提供了高电子流动性,并满足了下一代纳米级设备的性能要求.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 半导体设备物理 半导体设备物理
背景情况:
- 二维 (2D) 半导体对于将摩尔定律扩展到5纳米尺度之外至关重要.
- 氧化 (Ga2O3) 是用于先进电子应用的有希望的材料.
研究的目的:
- 调查5nm双层 (BL) Ga2O3金属氧化物半导体场效应晶体管 (MOSFETs) 的电子结构和弹道运输.
- 评估BL Ga2O3 MOSFETs用于5nm以下时代的高性能应用.
主要方法:
- 第一原则计算.第一原则计算.
- 没有平衡 格林的函数方法.
- 分析电子结构和传输特征.
主要成果:
- BL Ga2O3 呈现出一种近乎直接的带结构,带隙为 4.77 eV.
- 在300K时观察到910cm2V-1s-1的高电子流动性.
- BL Ga2O3 n-MOSFET满足半导体国际技术路线图的要求,门长度低至4纳米.
- 底层结构可以进一步提高 sub-3 nm 区域的性能.
结论:
- BL Ga2O3是5nm以下MOSFET应用的一个强有力的候选.
- 该材料与其他2D材料相比,显示出具有竞争力的性能指标.
- 进一步优化可以将其应用推向-3nm以下的模式.
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