研究MoTe2场效应晶体管中的电荷陷:SiO2绝缘体陷和MoTe2散装陷
Giheon Kim1, Dang Xuan Dang1, Hamza Zad Gul2
1Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Nanotechnology
|October 7, 2023
概括
选择适当的门介电材料,如六角化 (h-BN),可以最大限度地减少二化 (MoTe2) 场效应晶体管中的电荷陷,从而提高它们在电子应用中的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 基于二维材料的场效应晶体管 (FET) 对于先进的电子和光电子设备至关重要.
- 在FET内部的陷状态中捕获电荷会导致歇斯底里,通过捕获和释放通道载体来降低设备性能.
研究的目的:
- 研究不同门介电物 (SiO2和h-BN) 对MoTe2 FET中电荷捕获行为的影响.
- 分析MoTe2 FET转移特征中的温度依赖性歇斯底里.
- 识别充电陷的电源及其能量水平.
主要方法:
- 使用SiO2和h-BN作为后门介电材料制造MoTe2 FET.
- 对FET转移曲线的温度依赖性表征以研究歇斯底里.
- 排放电流的短暂测量以确定陷能量水平.
主要成果:
- 有SiO2的MoTe2 FET表现出受SiO2绝缘体陷和MoTe2散装陷影响的歇斯底里,散装陷在310 K以上占主导地位.
- 带有h-BN的MoTe2 FET显示出极少的绝缘器陷,主要显示在高温下MoTe2散装陷.
- 陷能量水平估计在导电带边缘以下为389 meV,与空隙一致.
结论:
- 门介电器的选择显著影响MoTe2 FET中的电荷捕获.
- 使用h-BN作为门介电器可以有效地减少陷状态,从而提高设备性能.
- 这些发现为制造基于MoTe2的高性能电子设备提供了有价值的指导方针.
相关概念视频
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01:22MOSFET: Enhancement Mode
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01:29Field Effect Transistor
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