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一种高度集成的非挥发性双向RFET,具有低泄漏电流

Xi Liu¹, Mengmeng Li¹, Shouqiang Zhang¹

¹School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, China.

|October 9, 2023

概括

一个新的单门控制非挥发性双向可重新配置的场效应晶体管 (SGCN-BRFET) 集成了多个功能. 这种先进的FET简化了互连,并通过优化电荷存储以改善电流和减少泄漏来提高性能.

科学领域:

半导体设备物理半导体设备物理
材料科学材料科学材料科学
电气工程电气工程

背景情况:

现有的双向可重新配置的场效应晶体管 (BRFET) 通常需要独立供电的程序门 (PG),使设备架构复杂化.
在单个设备中同时实现非挥发性,双向性和可重新配置的功能是一个重大挑战.

研究的目的:

提出和分析一个由单个门控制的高度集成的非挥发性双向可重新配置的场效应晶体管 (SGCN-BRFET).
为了证明在SGCN-BRFET中同时实现非挥发性,双向和可重新配置的功能.
通过控制网关 (CG) 实现独立编程,简化设备互连.

主要方法:

拟议的SGCN-BRFET的制造和特征.
分析使用浮式程序门 (FPG) 中的电荷存储的编程机制.
系统地调查控制设备操作的物理机制.
与传统的BRFET相比,对性能进行比较分析.
详细讨论存储电荷量对设备性能的影响.

主要成果:

成功实施了一种单门控制装置,集成非挥发性,双向和可重新配置的功能.
证明控制门 (CG) 可以通过存储电荷在FPG中独立编程设备,从而简化互连.
通过将FPG编程成具有不同充电类型的设备传导类型的重新配置.
储存电荷量的优化导致了前向电流的增强和漏电流的减少.

结论:

拟议的SGCN-BRFET为先进的电子应用提供了一个高度集成的解决方案.
单门控制机制简化了设备的设计和制造.
在FPG中优化充电存储对于实现卓越的设备性能至关重要,包括高电流和低泄漏.

关键词:

这是双向的双向.具有低泄漏率的低泄漏不易挥发的不易挥发的可以重新配置的FET.

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