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通过使用新型挥发性Sn前体进行原子层沉积,对化 (Sn₃N₄) 的评估

Hyeonbin Park^1,2, Heenang Choi^1,3, Sunyoung Shin¹

¹Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea. jy.ryu@krict.re.kr.

Dalton transactions (Cambridge, England : 2003)

|October 9, 2023

概括

新的锡 (Sn) 前体被合成用于化 (Sn3N4) 薄膜沉积. Sn ((tbtp) 2 显示出出色的挥发性和适合原子层沉积,使其在光伏设备中的潜在使用成为可能.

科学领域:

材料科学材料科学材料科学
无机化学无机化学有机化学
薄膜沉积的情况

背景情况:

新型前体的开发对于先进的薄膜沉积技术,如原子层沉积 (ALD),至关重要.
化 (Sn3N4) 是光伏应用的一个有希望的材料,因为它具有合适的带隙.
需要高质量的Sn3N4薄膜的高效合成路径.

研究的目的:

合成和表征含有循环氨基联结体的新型锡前体.
评估这些前体对于化薄膜原子层沉积的适用性.
评估沉积的Sn3N4薄膜对潜在的光伏应用的性能.

主要方法:

使用分析技术和DFT计算,合成和描述新型锡前体 (Sn(tbip) 2,Sn(tbtp) 2,Sn(tbta) 2).
用于结构分析的X射线晶体学.
用于波动性评估的热重力测量分析 (TGA).
使用Sn (tbtp) 2和NH3等离子体进行原子层沉积 (ALD).
紫外线-Vis光谱仪用于光学带隙测定.

主要成果:

形成了具有扭曲波几何学的单质SNL2复合体.
所有合成的前体都表现出异常的挥发性,其中Sn ((tbtp) 2显示出最低的残留量.
在Sn3N4的ALD中,Sn(tbtp) 2被证明是理想的,在150-225°C无化的情况下表现出和生长 (1.9 Å/周期).
由此产生的 Sn3N4 薄膜具有 1-1.2 eV 的间接光学带隙.

结论:

新型循环氨基基基锡前体已成功合成和表征.
Sn(tbtp) 2是Sn3N4.4的ALD的高度挥发性和有效的前体.
合成的Sn3N4薄膜具有适用于薄膜光伏设备的特性.

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