通过单一设备上的偏差电压调节,对光探测器和神经形态视觉传感器进行双模式转换
Siyu Feng1,2, Jiangxu Li1, Lizhi Feng1,3,4
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72 Wenhua Road, Shenyang, 110016, China.
Advanced materials (Deerfield Beach, Fla.)
|October 9, 2023
概括
这项研究开发了一种新的GaN/Ga2O3/GaN设备,它既可以作为快速光探测器,也可以作为神经形态视觉传感器 (NVS). 简单地调整电压就会切换它的作用,从而实现先进的光学成像和机器人视觉应用.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 神经形态工程的神经形态工程
背景情况:
- 整合光探测器和神经形态视觉传感器 (NVS) 是一个挑战,因为不同的响应速度.
- 现有的设备往往需要单独的组件,增加复杂性和尺寸.
研究的目的:
- 制造一个单一的光电子设备,能够同时执行光探测器和NVS功能.
- 为了克服光检测器和NVS之间的速度差异挑战.
主要方法:
- 制造一个沟桥的GaN/Ga2O3/GaN背对背双异质连接阵列.
- 在Ga2O3中利用氧气空位的电离/去电离来调节光响应.
- 调整偏差电压,在光探测器和NVS模式之间切换.
主要成果:
- 该设备在低电压下表现出快速的光响应,在高电压下表现出持久的光导性.
- 成功证明了作为光电探测器 (快速成像,光通信) 和NVS (图像传感,内存,预处理) 的双重功能.
- 通过NVS预处理,显著提高了识别准确性和效率.
结论:
- 一个单一的GaN/Ga2O3/GaN设备可以通过电压控制实现光探测器和NVS功能.
- 这种方法为复杂的光电子设备提供了新的途径.
- 能够实现先进的机器人视觉系统和神经形态计算应用.
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