电极材料对基于NbOx的记忆装置的电阻切换行为的影响
Giuseppe Leonetti1, Matteo Fretto2, Fabrizio Candido Pirri1
1Department of Applied Science and Technology (DISAT), Politecnico di Torino, C.So Duca Degli Abruzzi 24, 10129, Turin, Italy.
Scientific reports
|October 9, 2023
概括
选择正确的电极金属显著影响氧化 (NbOx) 记忆装置. (Pt) 电极提供了卓越的性能,特别是对于较薄的设备,使先进计算能够实现稳定可靠的电阻开关.
科学领域:
- 材料科学与工程 材料科学与工程
- 固态电子 固态电子
- 纳米技术纳米技术
背景情况:
- 在memristive设备中基于Redox的电阻切换对于下一代计算至关重要.
- 了解这些设备中的材料-接口-功能关系仍然是一个挑战.
- 氧化 (NbOx) 记忆器是高级记忆应用的有希望的候选者.
研究的目的:
- 调查各种顶部电极金属对基于NbOx的记忆装置功能的影响.
- 为了将电极材料特性与电阻开关特征相关联.
- 为了确定最佳的电极材料,以提高memristor性能和可靠性.
主要方法:
- 在Nb基质上使用阳极氧化制造无形NbOx记忆装置.
- 对顶部电极的研究包括金 (Au), (Pt), (Ir),化 (TiN) 和 (Nb).
- 分析电子传输特性,电成型过程和电阻开关行为.
主要成果:
- 电极金属的选择对金属绝缘体接口的电子传输和舒特基屏障的形成产生了重大影响.
- 具有电子阻塞特性的Au和Pt电极可以提高电阻开关性能.
- Pt电极表现出优异的结果,特别是在减少NbOx厚度的情况下,在操作和电阻状态中产生较低的变化.
结论:
- 电极金属的选择是优化NbOx记忆器件的一个关键因素.
- 与Au和Pt形成的Schottky接口可以提高设备的性能.
- Pt成为制造高可靠性和低可变性NbOx记忆元的首选电极材料,特别是用于缩小规模的设备.
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