在长波长的基于InGaN的LED中,压电效应的效率提升机制
Li Liu1, Qingqing Feng1, Yu Zhang1
1Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang 330038, China. xiong_zhihua@126.com.
Physical chemistry chemical physics : PCCP
|October 10, 2023
概括
在化 (InGaN) 量子井中的压力工程增强了孔注入和电子孔重叠. 这提高了基于InGaN的发光二极管 (LED) 的内部量子效率,用于全彩微型LED显示器.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 光电学是指光电子产品.
背景情况:
- 在微型LED显示器的长波长InGaN LED中实现高发光效率是一个重大挑战.
- 在InGaN/GaN异构中的压电效应影响载体行为和设备性能.
研究的目的:
- 研究应变诱导的压电效应对InGaN/GaN异构中的载体再分配和发光效率的影响.
- 从理论上分析调制价值带偏移和内部电场如何影响基于InGaN的LED性能.
主要方法:
- 在InGaN/GaN异构结构中对能量波段结构和载体动态进行理论分析.
- 在 (Si) 基板上生长的GaN薄膜中对应变效应的研究.
- 计算价值带偏移 (VBO) 和内部电场.
主要成果:
- 在Si上培养的GaN薄膜中的拉伸应变削弱了InGaN井的内部电场,使能量带平坦化,并增加了电子孔波函数重叠.
- 应变诱导的压电极化减少了InGaN/GaN量子井 (QWs) 中的耗尽区域.
- 沿着[0001]方向的VBO减小显著改善了孔注入.
结论:
- 控制InGaN QW层的压电偏振是一种可行的策略,可以提高基于InGaN的LED的内部量子效率.
- 应变工程为高级显示应用程序优化InGaN LED性能提供了一条途径.
相关概念视频
01:16Biasing of P-N Junction
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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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01:22MOSFET: Enhancement Mode
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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