在全芯片YIG空腔共振器中使用混合YIG/Py磁屏障进行磁封闭
Obed Alves Santos1,2, Bart J van Wees1
1Physics of Nanodevices Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4 AG, Groningen 9747, The Netherlands.
Nano letters
|October 11, 2023
概括
研究人员在伊铁花 (YIG) 腔中演示了磁封闭,为先进的磁设备铺平了道路. 这种磁子在芯片上的控制是使用自旋测量来验证的.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 将磁子限制在空洞中对于开发磁子设备至关重要.
- 这些设备旨在模拟已有的光子和电子元件.
研究的目的:
- 为了证明概念验证,在一个全芯片的伊铁 (YIG) 腔中封闭了马格农.
- 建立一种控制芯片上的连贯磁子的方法.
主要方法:
- 使用石墨法制造YIG腔的制造,由YIG/Permalloy双层定义.
- 利用YIG薄膜的修改磁性特性来创建磁性限制区域.
- 测量旋转电压峰值,使用放置在空腔内的金 (Pt) 条.
主要成果:
- 磁子在设计的YIG腔内成功被封闭.
- 观察到多个旋转电压峰值,与马格农限制相对应.
- 实验结果与YIG板块几何学计算的旋波共振模式保持一致.
结论:
- 石版技术可以制造微米大小的YIG空腔,用于磁控制.
- 在纳米尺寸的 Pt 条中进行自旋电压测量,作为磁力共振强度的非侵入性局部探测器.
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