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大面积的长轴摩特绝缘1T-TaSe2单层在GaP上

H Koussir1, Y Chernukha1, C Sthioul1

  • 1Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France.

Nano letters
|October 11, 2023
PubMed
概括

研究人员在化基板上制造了二维Mott材料,特别是1T-TaSe单层. 这一突破使得Mott在高温下能够实现强大的Mott绝缘相,从而推进了Mott电子应用.

关键词:
莫特半导体 半导体电荷密度波是指电荷密度波.莫雷尔的意思是莫雷尔.分子光束的表达式是epitaxy.一个单层的1T-TaSe2

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