极化分辨率近红外PdSe2 p-i-n同联光电探测器
Jiayang Jiang1, Weiting Xu2, Fuqiang Guo1
1State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Nano letters
|October 12, 2023
概括
研究人员为先进的光电子产品创造了一种新型的二化 (PdSe2) p-i-n同质连接. 该设备作为近红外光探测器表现出色,包括极化灵敏度.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 双维过渡金属二甲基化物 (TMDC) 对光电子设备至关重要.
- 高质量的同质接口对于基于TMDC的设备性能至关重要.
- 二化 (PdSe2) 具有独特的电子和光学特性.
研究的目的:
- 使用静电兴奋剂构建一个横向的PdSe2 p-i-n同接点.
- 为了研究制造的PdSe2同质连接的光电子特性.
- 评估其作为一个极化敏感的近红外光探测器的潜力.
主要方法:
- 通过静电兴奋剂制造一个侧面的PdSe2 p-i-n同位连接.
- 电气表征以评估二极管整形和理想度因子.
- 光伏测量以确定响应性,检测性和线性.
- 对响应时间和偏振依赖光学属性的分析.
主要成果:
- PdSe2同结二极管表现出强烈的校正 (>10^4) 和接近1.0的理想系数.
- 高响应性 (1.1 A/W),检测性 (1.3 × 10^11 斯) 和线性 (45 dB) 在 1064 nm 实现.
- 降低的交叉电容导致了超快的响应时间 (3/6μs).
- 该设备表现出极化区别,在1064 nm时二色比为1.6.
结论:
- 构建的PdSe2侧面p-i-n同接点表现出极好的二极管特性.
- 该设备作为一个高性能,超快速,极化敏感的近红外光探测器.
- 这项技术对下一代光电子应用具有重大前景.
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