雪崩晶体管切换模式对固态脉冲源波形特征的影响
Zhenbo Cheng1,2, Hui Ning2, Chuanxiang Tang1
1Department of Engineering Physics, Tsinghua University, Beijing 100084, China.
The Review of scientific instruments
|October 12, 2023
概括
这项研究阐明了马克思电路中的雪崩晶体管 (AT) 切换机制,揭示了电压坡模式 (VRM) 导致振荡. 将电路修改为使用基触发模式 (BTM) 消除了这些振荡,从而改善了纳米秒脉冲生成.
科学领域:
- 电气工程 电气工程
- 半导体物理 半导体物理
- 脉冲动力系统 脉冲动力系统
背景情况:
- 马克思电路对于使用固态脉冲源产生纳秒脉冲至关重要.
- 雪崩晶体管 (AT) 对输出脉冲特征的确切影响仍然不完全理解.
- 调查AT切换行为对于优化固态脉冲源性能至关重要.
研究的目的:
- 研究马克思电路内的雪崩晶体管 (AT) 的切换机制.
- 分析不同开关模式 (基本触发模式 - BTM,电压坡道模式 - VRM) 对脉冲特征的影响.
- 为增强输出脉冲参数控制提出修改的马克思电路设计.
主要方法:
- 模拟半导体设备的混合模式模拟以模拟AT开关.
- 对模拟模型的短暂切换特征进行实验验证.
- 对AT切换机制的分析,区分BTM和VRM.
主要成果:
- 模拟精度需要特定的宽度参数 (100微米) 用于AT模型在BTM,不同于物理尺寸.
- 在VRM中,由于在初始冲击电离过程中电场的增加,AT表现出更高的切换速度.
- VRM 切换可能会导致 AT 中的振荡,因为载波位置位于特定接口 (p-n0 或 n0-n+).
结论:
- 一个修改的马克思电路设计迫使所有AT在BTM中运行,抑制VRM诱导的振荡.
- 修改后的电路显著改善了输出脉冲的特性,将前沿从275 ps增加到1125 ps.
- 这项研究提供了优化固态脉冲源输出波形的关键方法.
相关概念视频
Switching of BJT
433
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
433
MOSFET: Enhancement Mode
363
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
363
MOSFET: Depletion Mode
369
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
369
Bipolar Junction Transistor
784
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
784
Characteristics of MOSFET
399
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
399
Characteristics of JFET
526
Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
526


