从密度函数理论计算得出的元素晶体的平均内部潜力:高效计算和趋势
Avi Auslender1, Nivedita Pandey1, Amit Kohn1
1Department of Materials Science and Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv 69978, Israel.
Ultramicroscopy
|October 12, 2023
概括
我们提出了一种更快的计算方法来确定晶体的平均内部电位 (V0),这对于电子显微镜至关重要. 这种方法可以解释原子结合,比以前的方法提供更准确的V0值.
科学领域:
- 固态物理 固态物理
- 材料科学是一种材料科学.
- 计算化学是一种计算化学.
背景情况:
- 平均内部电位 (V0) 对电子显微镜至关重要,但实验值往往不同意.
- 现有的理论方法往往忽略了原子结合或是计算密集型.
研究的目的:
- 通过密度函数理论 (DFT) 引入一种更快的计算方法来计算V0.
- 为44种元素固体提供准确的V0值,包括超出独立原子近似的量子力学计算.
- 调查表面终点对V0的影响,并探索与其他材料属性的相关性.
主要方法:
- 开发了一个更快的DFT实现,使用投影机增强波方法和输出文件的后处理.
- 对44种基本固体进行计算的V0.
- 分析了V0对表面终点的依赖性,并将V0与质量密度和磁性易感性进行比较.
主要成果:
- 计算了44个元素固体的V0,准确度提高,包括首次超出独立原子近似的量子力学计算.
- 由于不同的表面终点,观察到超过3V的V0差异,强调对边界条件的敏感性.
- 建立了V0和质量密度之间的线性相关性,并证明了V0在近似磁性易感性和计算原子散射幅度方面的实用性.
结论:
- 开发的DFT方法提供了一种计算效率高,准确的方法来确定平均内部潜力.
- 平均内电位对表面效应敏感,其值与密度和磁性敏感性等基本材料特性相关.
- 这项工作为电子显微镜和材料表征提供了宝贵的工具.
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