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了解聚合物-电极接口上的接触电阻的微观起源

Kalyani Patrikar¹, V Ramgopal Rao², Dinesh Kabra³

¹Department of Chemistry, Indian Institute of Technology Gandhinagar, Gandhinagar, Gujarat 382355, India.

ACS applied materials & interfaces

|October 13, 2023

概括

有机电子设备的接触电阻通过优化能量水平和有机半导体 (OSC) 和电极之间的电子合来降低. 这项研究揭示了电荷传输速率与接触电阻有很强的相关性,指导了未来的设备设计.

科学领域:

有机电子学有机电子学
材料科学是一种材料科学.
固态物理固态物理

背景情况:

有机器件中的接触电阻 (RC) 源于电极和有机半导体 (OSC) 之间的能量水平不匹配.
影响这些接口的电荷传输的微观因素仍然不完全理解.

研究的目的:

研究有机场效应晶体管 (OFET) 中接触电阻的微观起源.
为了将电荷传输速率与各种OSC和电极材料的测量接触电阻相关联.

主要方法:

使用不同的OSC (PTB7,PCDTBT,PTB7-Th) 和电极 (MoO3,Au,Ag) 制造OFET.
测量已制造的设备的接触电阻 (RC).
使用投影机操作员的Diabatization方法来分析接口电子结构和合的第一原则计算.

主要成果:

基于PTB7-Th的设备始终显示出最低的接触电阻,无论电极材料如何.
第一原则计算确定了OSC最高占成分子轨道 (HOMOs) 和电极状态之间的能量水平对齐和电子合是影响RC的关键因素.
计算的电荷转移速率与观察到的接触电阻趋势有很强的相关性.

结论:

设备的接触电阻基本上取决于OSC-电极接口上的电荷转移的可行性.
优化OSC和电极之间的能量水平和电子合对于最大限度地降低有机电子设备的接触电阻至关重要.

关键词:

接触电阻接触电阻接触电阻状态的密度国家密度.电子转移速率的电子转移速率是什么电子合器电子合器有机晶体管有机晶体管投影机操作员的投影方式 diabatization

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