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基于p-GaN的接触器及其在激光二极管中的应用

Iryna Levchenko1, Serhii Kryvyi2,3, Eliana Kamińska1

  • 1Institute of High Pressures Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland.

Materials (Basel, Switzerland)
|October 14, 2023
PubMed
概括

在N2 + O2气中优化 (Pd) 接触厚度和化,可以提高p-GaN设备的电性能. 这减少了接触电阻,这对于高效的激光二极管 (LD) 来说至关重要.

关键词:
扩散扩散是一种扩散.化 (GaN) 是一种化.黄金 (Au) 是一种激光二极管 (LD) 的使用(Ni) 是一种.欧姆接触的接触是欧姆接触.帕拉 (Pd) 是一种固态解决方案的固态解决方案特定的接触电阻 (ρ)热蒸发是一种热蒸发.

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